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SEMICONDUCTOR
HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
40A, 600V, Rugged UFS Series N-Channel IGBTs
Description
This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices demonstrate RUGGED performance capability when subjected to harsh SHORT CIRCUIT WITHSTAND TIME (SCWT) conditions. The parts have ULTRAFAST (UFS) switching speed while the on-state conduction losses have been kept at a low level. The electrical specifications include typical Turn-On and Turn-Off dv/dt ratings. These ratings and the Turn-On ratings include the effect of the diode in the test circuit (Figure 16). The data was obtained with the diode at the same TJ as the IGBT under test. Formerly Developmental Type TA49047.
January 1997
Features
* 40A, 600V TJ = 25oC * 600V Switching SOA Capability * Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns * Short Circuit Rating at TJ = 150oC . . . . . . . . . . . . . 10s * Low Conduction Loss
Ordering Information
PART NUMBER HGTP20N60C3R HGTG20N60C3R HGT1S20N60C3R HGT1S20N60C3RS PACKAGE TO-220AB TO-247 TO-262AA TO-263AB BRAND 20N60C3R 20N60C3R 20N60C3R 20N60C3R
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N60C3RS9A.
G E
Packaging
JEDEC STYLE TO-247
E C G
JEDEC TO-220AB (ALTERNATE VERSION)
E C G
COLLECTOR (FLANGE)
COLLECTOR (FLANGE)
JEDEC TO-263AB
M A
JEDEC TO-262AA
E C G
COLLECTOR (FLANGE)
A
G E COLLECTOR (FLANGE)
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright
(c) Harris Corporation 1997
File Number
4226.1
5-3
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified ALL TYPES 600 40 20 80 20 30 80A at 600V 164 1.32 100 -40 to 150 260 10 UNITS V A A A V V W W/oC mJ oC oC s
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Fig. 12 . . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 440V, TJ = 150oC, RGE = 10.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES VCE = BVCES IC = IC110, VGE = 15V IC = 250A, VCE = VGE VGE = 20V TJ = 150oC RG = 10 VGE = 15V IC = IC110, VCE = 0.5 BVES VCE(PK) = 600V L = 1mH TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC MIN 600 15 3.5 80 TYP 1.8 2.1 6.3 MAX 250 3.0 2.2 2.5 7.5 100 UNITS V V A mA V V V nA A
Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage Gate-Emitter Leakage Current Switching SOA (See Figure 12)
Gate-Emitter Plateau Voltage On-State Gate Charge
VGEP QG(ON) tD(ON)I tRI tD(OFF)I tFI dVCE/dt dVCE/dt EON EOFF RJC
IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V
-
9.0 87 116 34 40 390 330 1.3 7.0 2.3 3.0 -
110 150 500 400 0.76
V nC nC ns ns ns ns V/ns V/ns mJ mJ
oC/W
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-Off Voltage dv/dt (Note 3) Turn-On Voltage dv/dt (Note 3) Turn-On Energy (Note 4) Turn-Off Energy (Note 5) Thermal Resistance
TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 10 L = 1mH Diode used in test circuit RURP1560 at 150oC
-
NOTES: 3. dVCE/dt depends on the diode used and the temperature of the diode. 4. Turn-On Energy Loss (EON) includes diode losses and is defined as the integral of the instantaneous power loss starting at the leading edge of the input pulse and ending at the point where the collector voltage equals VCE(ON). This value of EON was obtained with a RURP1560 diode at TJ = 150oC. A different diode or temperature will result in a different EON. For example with diode at TJ = 25oC EON is about one half the value at 150oC. 5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5-4
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS Typical Performance Curves
ICE, COLLECTOR EMITTER CURRENT (A) ICE, COLLECTOR EMITTER CURRENT (A) 80 70 60 50 TC = -40oC 40 30 20 10 0 6 7 8 9 10 11 12 13 VGE , GATE TO EMITTER VOLTAGE (V) 14 15 TC = 150oC TC = 25oC DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s 40 35 30 25 20 15 10 5 0 0 1 2 3 9.0V 8.5V 8.0V 7.5V 4 5 6 7 8 9 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 12.0V 10.0V VGE = 15.0V DUTY CYCLE <0.5%, TC = 25oC PULSE DURATION = 250s
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
ICE, COLLECTOR EMITTER CURRENT (A)
ICE, DC COLLECTOR CURRENT (A)
PULSE DURATION = 250s 80 DUTY CYCLE <0.5% VGE = 15V 70 TC = -40oC 60 50 40 30 20 10 0 0 1 8 2 4 6 3 5 7 9 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 10 TC = 150oC TC = 25oC
90
40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 VGE = 15V
TC , CASE TEMPERATURE (oC)
FIGURE 3. COLLECTOR EMITTER ON STATE VOLTAGE
FIGURE 4. DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE
38 tD(ON)I , TURN ON DELAY TIME (ns) 36 34 32 30 28 26 5
tD(OFF)I , TURN OFF DELAY TIME (ns)
TJ = 150oC, RG = 10, L = 1mH, VCE(PK) = 480V VGE = 15V
425 400
TJ = 150oC, RG = 10, L = 1mH, VCE(PK) = 480V, VGE = 15V
375 350 325 300 275
10
20 30 15 25 35 ICE , COLLECTOR-EMITTER CURRENT (A)
40
5
20 25 30 35 10 15 ICE , COLLECTOR EMITTER CURRENT (A)
40
FIGURE 5. TURN ON DELAY TIME AS A FUNCTION OF COLLECTOR EMITTER CURRENT
FIGURE 6. TURN OFF DELAY TIME AS A FUNCTION OF COLLECTOR EMITTER CURRENT
5-5
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS Typical Performance Curves
120 tRI , TURN ON RISE TIME (ns) 100
(Continued)
450 425 tFI , FALL TIME (ns) 400 375 350 325 300 TJ = 150oC, RG = 10, L = 1mH, VCE(PK) = 480V, VGE = 15V
TJ = 150oC, RG = 10, L = 1mH, VCE(PK) = 480V, VGE = 15V
80 60 40 20 0 5 10 15 20 25 30 35 40 ICE , COLLECTOR-EMITTER CURRENT (A)
275 250 5 10 15 20 25 30 35 40
ICE , COLLECTOR EMITTER CURRENT (A)
FIGURE 7. TURN ON RISE TIME AS A FUNCTION OF COLLECTOR EMITTER CURRENT
FIGURE 8. TURN OFF FALL TIME AS A FUNCTION OF COLLECTOR EMITTER CURRENT
6.0 EON , TURN ON ENERGY LOSS (mJ) 5.0 4.0 3.0 2.0
EOFF , TURN OFF ENERGY LOSS (mJ)
TJ = 150oC, RG = 10, L = 1mH, VCE(PK) = 480V, VGE = 15V
6.5 5.5 4.5 3.5 2.5 1.5
TJ = 150oC, RG = 10, L = 1mH, VCE(PK) = 480V, VGE = 15V
1.0
0
5
15 20 30 10 25 35 ICE , COLLECTOR EMITTER CURRENT (A)
40
0.5
5
10 15 20 25 30 35 ICE , COLLECTOR EMITTER CURRENT (A)
40
FIGURE 9. TURN ON ENERGY LOSS AS A FUNCTION OF COLLECTOR EMITTER CURRENT
FIGURE 10. TURN OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR EMITTER CURRENT
ICE, COLLECTOR EMITTER CURRENT (A)
100 fMAX , OPERATING FREQUENCY (kHz)
TJ = 150oC, RG = 10, L = 1mH, VCE(PK) = 480V TC = 75oC, VGE = 15V
100
TJ = 150oC, RG = 10, VGE = 15V, L = 1mH
80 PARTS MAY CURRENT LIMIT IN THIS REGION. 60
30 20 10 fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 0.76oC/W 1 5 10 20 30 ICE , COLLECTOR EMITTER CURRENT (A) 40
40
20
0
0
100
200
300
400
500
600
700
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 11. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR EMITTER CURRENT
FIGURE 12. SWITCHING SAFE OPERATING AREA
5-6
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS Typical Performance Curves
4500 VCE , COLLECTOR EMITTER VOLTAGE (V) FREQUENCY = 1MHz 4000 CIES 3500 C, CAPACITANCE (pF) 3000 2500 2000 1500 1000 500 0 0 5 10 COES CRES 15 20 25 600
(Continued)
IG REF = 1.376mA, RL = 30, TC = 25oC VCE = 600V 480 12
15 VGE, GATE-EMITTER VOLTAGE (V) 101
360 VCE = 200V 240 VCE = 400V
9
6
120
3
0
0 0 10 20 30 40 50 60 70 80 90 QG , GATE CHARGE (nC)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS
ZJC , NORMALIZED THERMAL RESPONSE
100
0.5 0.2
10-1
0.1 0.05 0.02 0.01 SINGLE PULSE PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-4 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) 100 t1
10-2
10-3 10-5
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Test Circuit and Waveform
L = 1mH RURP1560 VGE EOFF RG = 10 + VDD = 480V ICE 10% tD(OFF)I tFI tRI tD(ON)I VCE 90% 90% 10% EON
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 17. SWITCHING TEST WAVEFORMS
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HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBT's can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. ECCOSORBDTM is a Trademark of Emerson and Cumming, Inc.
Operating Frequency Information
Operating frequency information for a typical device (Figure 11) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 3, 5, 6, 9 and 10. The operating frequency plot (Figure 11) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I+ tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 17. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 11) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 17. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turnoff. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0).
All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
Sales Office Headquarters
For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS NORTH AMERICA Harris Semiconductor P. O. Box 883, Mail Stop 53-210 Melbourne, FL 32902 TEL: 1-800-442-7747 (407) 729-4984 FAX: (407) 729-5321 EUROPE Harris Semiconductor Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Harris Semiconductor PTE Ltd. No. 1 Tannery Road Cencon 1, #09-01 Singapore 1334 TEL: (65) 748-4200 FAX: (65) 748-0400
SEMICONDUCTOR
5-8

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